DESCRIPTION
A Darlington configuration featuring one micron emitters provides high FT and excellent thermal performance. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation. Gain (dB) Return Loss (dB) Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS 9 SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS Gain & Return Loss vs. Frequency VD= 2.9 V, ID= 35 mA (Typ.) 24 GAIN 18 IRL 12 ORL 6 0 01234 Frequency (GHz) 0 -10 -20 -30 -40 5 FEATURES
High Gain: 18.0dB at 1950 MHz Cascadable 50Ω Operates from Single Supply Low Thermal Resistance Package APPLICATIONS
PA Driver Amplifier Cellular, PCS, GSM, UMTS IF Amplifier Wireless Data, Satellite Parameter Small Signal Gain Output Power at 1dB Compression Output Third Intercept Point Bandwidth Determined by Return Loss Input Return Loss Output Return Loss Noise Figure Device Operating Voltage Device Operating Current Thermal Resistance (Junction - Lead) Min.
RFMD
