Datasheet4U Logo Datasheet4U.com

SGA2186Z - CASCADABLE SiGe HBT MMIC AMPLIFIER

General Description

The SGA2186Z is a high performance SiGe HBT MMIC Amplifier.

A Darlington configuration featuring one-micron emitters provides high FT and excellent thermal performance.

The heterojunction increases breakdown voltage and minimizes leakage current between junctions.

Key Features

  • Broadband Operation: DC to 5000 MHz.
  • Cascadable 50Ω.
  • Operates from Single Supply.
  • Low Thermal Resistance Package.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SGA ARINC 600 Rack and Panel Connectors ITT Industries
SGA-0163 Silicon Germanium Cascadeable Gain Block Sirenza Microdevices
SGA-0163Z Silicon Germanium Cascadeable Gain Block Sirenza Microdevices
SGA-0363 Silicon Germanium Cascadeable Gain Block Sirenza Microdevices
SGA-0363Z Silicon Germanium Cascadeable Gain Block Sirenza Microdevices

Other Datasheets by RF Micro Devices (now Qorvo)

Part Number Description
SGA2163Z CASCADABLE SiGe HBT MMIC AMPLIFIER
SGA2263Z CASCADABLE SiGe HBT MMIC AMPLIFIER
SGA2286Z CASCADABLE SiGe HBT MMIC AMPLIFIER
SGA2386Z CASCADABLE SiGe HBT MMIC AMPLIFIER
SGA2486Z CASCADABLE SiGe HBT MMIC AMPLIFIER

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SGA2186ZSGA2186Z DC to 5000MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-86 Product Description The SGA2186Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation. Gain (dB) Return Loss (dB) Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS  SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS 12 9 6 3 0 0 Gain & Return Loss vs. Freq.