RFMD SGA2263Z
The SGA2263Z is a high performance SiGe HBT MMIC Amplifier. The heterojunction increases breakdown voltage and minimizes leakage current between junctions.| Part No. | SGA2263Z |
|---|---|
| Datasheet | SGA2263Z Download |
| Manufacturer |  RFMD |
| Description | CASCADABLE SiGe HBT MMIC AMPLIFIER |
| Buy | Stock & Price |
DESCRIPTION
A Darlington configuration featuring one-micron emitters provides high FT and excellent thermal performance. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation. Gain (dB) Return Loss (dB) Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS Gain & Return Loss vs. Freq. @TL=+25°C 24 0 18 GAIN 12 IRL 6 ORL 0 0123 Frequency (GHz) 4 -10 -20 -30 -40 5FEATURES
● High Gain: 13.8dB at 1950 MHz● Cascadable 50
● Operates from Single Supply
● Low Thermal Resistance Package
APPLICATIONS
● PA Driver Amplifier● Cellular, PCS, GSM, UMTS
● IF Amplifier
● Wireless Data, Satellite Parameter Specification Min. Typ. Max. Unit Condition Small Signal Gain 13 14.7 16.2 dB 850MHz 13.5 dB 1950MHz 13.2 dB 2400MHz Output Power at 1dB Compression 7.5 d...
