RFMD SGA3286Z
The SGA3286Z is a high performance SiGe HBT MMIC Amplifier. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. At 850MHz and 35mA, the SGA3286Z typically provides +12.2dBm of 1dB compressed power using a single positive voltage supply.| Part No. | SGA3286Z |
|---|---|
| Datasheet | SGA3286Z Download |
| Manufacturer |  RFMD |
| Description | CASCADABLE SiGe HBT MMIC AMPLIFIER |
| Buy | Stock & Price |
DESCRIPTION
A Darlington configuration featuring one-micron emitters provides high FT and excellent thermal performance. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation. Gain (dB) Return Loss (dB) Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS Gain & Return Loss vs. Frequency VD= 2.6 V, ID= 35 mA (Typ.) 20 15 GAIN IRL 10 ORL 5 0 01234 Frequency (GHz) 0 -10 -20 -30 -40 5FEATURES
● Broadband Operation: DC to 5000 MHz● Cascadable 50
● Patented SiGe Technology
● Operates from Single Supply
● Low Thermal Resistance Package
APPLICATIONS
● PA Driver Amplifier● Cellular, PCS, GSM, UMTS
● IF Amplifier
● Wireless, Data, Satellite Parameter Specification Min. Typ. Max. Unit Condition Small Signal Gain 13.0 14.5 16.0 dB 850MHz 13.0 dB 1950...
