RFMD SGA3386Z
The SGA3386Z is a high performance SiGe HBT MMIC Amplifier. The heterojunction increases breakdown voltage and minimizes leakage current between junctions.| Part No. | SGA3386Z |
|---|---|
| Datasheet | SGA3386Z Download |
| Manufacturer |  RFMD |
| Description | CASCADABLE SiGe HBT MMIC AMPLIFIER |
| Buy | Stock & Price |
DESCRIPTION
A Darlington configuration featuring one-micron emitters provides high FT and excellent thermal performance. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation. Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS Gain (dB) Return Loss (dB) Gain & Return Loss vs. Frequency 20 GAIN VD= 2.6 V, ID= 35 mA (Typ.) 15 IRL 10 ORL 5 0 012345 Frequency (GHz) 0 -10 -20 -30 -40 6 TL=+25ºCFEATURES
● High Gain: 15.3dB at 1950 MHz● Cascadable 50Ω
● Operates from Single Supply
● Low Thermal Resistance Package
APPLICATIONS
● PA Driver Amplifier● Cellular, PCS, GSM, UMTS
● IF Amplifier
● Wireless Data, Satellite Parameter Specification Min. Typ. Max. Unit Condition Small Signal Gain 15.5 17.0 19.0 dB 850MHz 15.3 dB 1950MHz 14.4 dB 2400MHz Outp...
