RFMD SGA3586Z
The SGA3586Z is a high performance SiGe HBT MMIC Amplifier. The heterojunction increases breakdown voltage and minimizes leakage current between junctions.| Part No. | SGA3586Z |
|---|---|
| Datasheet | SGA3586Z Download |
| Manufacturer |  RFMD |
| Description | CASCADABLE SiGe HBT MMIC AMPLIFIER |
| Buy | Stock & Price |
DESCRIPTION
A Darlington configuration featuring one-micron emitters provides high FT and excellent thermal performance. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation. Gain (dB) Return Loss (dB) Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS Gain & Return Loss vs. Frequency 32 ID = 35 mA (Typ.) G AIN 24 IR L 0 -10 16 ORL 8 0 01 -20 TLEAD=+25ºC -30 23 Frequency (GHz) 4 -40 5FEATURES
● High Gain: 25dB at 850MHz● Cascadable 50Gain Block
● High Output IP3: 25dBm typ. at 1950MHz
● Low Noise Figure: 2.5dB typ. at 1950MHz
● Low Current Draw: 35mA typ.
● Single Voltage Supply Opera- tion
APPLICATIONS
● PA Driver Amplifier● Cellular, PCS, GSM, UMTS
● IF Amplifier
● Wireless Data, Satellite Parameter Specification Min. Typ. Max. Unit...
