RFMD SGA4286Z
The SGA4286Z is a high performance SiGe HBT MMIC Amplifier. The heterojunction increases breakdown voltage and minimizes leakage current between junctions.| Part No. | SGA4286Z |
|---|---|
| Datasheet | SGA4286Z Download |
| Manufacturer |  RFMD |
| Description | CASCADABLE SiGe HBT MMIC AMPLIFIER |
| Buy | Stock & Price |
DESCRIPTION
A Darlington configuration featuring one-micron emitters provides high FT and excellent thermal performance. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation. Gain (dB) Return Loss (dB) Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS Gain & Return Loss vs. Frequency 16 VD= 3.2 V, ID= 45 mA (Typ.) GAIN 12 IRL 8 4 ORL 0 01234 Frequency (GHz) 0 -10 -20 -30 -40 5FEATURES
● Broadband Operation: DC to 5000 MHz● Cascadable 50Ω
● Operates from Single Supply
● Low Thermal Resistance Package
APPLICATIONS
● PA Driver Amplifier● Cellular, PCS, GSM, UMTS
● IF Amplifier
● Wireless Data, Satellite Parameter Specification Min. Typ. Max. Unit Condition Small Signal Gain 12.0 13.5 15.0 dB 850MHz 12.0 dB 1950MHz 11.1 dB 2400MHz Output Po...
