RFMD SGA5286Z
The SGA5286Z is a high performance SiGe HBT MMIC Amplifier. The heterojunction increases breakdown voltage and minimizes leakage current between junctions.| Part No. | SGA5286Z |
|---|---|
| Datasheet | SGA5286Z Download |
| Manufacturer |  RFMD |
| Description | CASCADABLE SiGe HBT MMIC AMPLIFIER |
| Buy | Stock & Price |
DESCRIPTION
A Darlington configuration featuring one-micron emitters provides high FT and excellent thermal performance. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation. Gain (dB) Return Loss (dB) Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS Gain & Return Loss vs. Frequency VD= 3.5 V, ID= 60 mA (Typ.) 20 0 15 GAIN IRL 10 5 ORL 0 01 23 Frequency (GHz) -10 -20 TL=+25ºC -30 -40 45FEATURES
● High Gain: 12.0dB at 1950 MHz● Cascadable 50Ω
● Operates from Single Supply
● Low Thermal Resistance Package
APPLICATIONS
● PA Driver Amplifier● Cellular, PCS, GSM, UMTS
● IF Amplifier
● Wireless Data, Satellite Parameter Specification Min. Typ. Max. Unit Condition Small Signal Gain 12.2 13.5 14.9 dB 850MHz 12.0 dB 1950MHz 11.5 dB 2400MHz Outp...
