RFMD SGA5386Z
The SGA5386Z is a high performance SiGe HBT MMIC Amplifier. The heterojunction increases breakdown voltage and minimizes leakage current between junctions.| Part No. | SGA5386Z |
|---|---|
| Datasheet | SGA5386Z Download |
| Manufacturer |  RFMD |
| Description | CASCADABLE SiGe HBT MMIC AMPLIFIER |
| Buy | Stock & Price |
DESCRIPTION
A Darlington configuration featuring one-micron emitters provides high FT and excellent thermal performance. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation. Gain (dB) Return Loss (dB) Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS Gain & Return Loss vs. Frequency VD= 3.6 V, ID= 60 mA (Typ.) 20 GAIN 0 15 IRL 10 -10 -20 5 ORL TL=+25º-C30 0 -40 012345 Frequency (GHz)FEATURES
● High Gain: 14.9dB at 1950 MHz● Cascadable 50Ω
● Operates from Single Supply
● Low Thermal Resistance Package
APPLICATIONS
● PA Driver Amplifier● Cellular, PCS, GSM, UMTS
● IF Amplifier
● Wireless Data, Satellite Parameter Specification Min. Typ. Max. Unit Condition Small Signal Gain 15.2 16.6 18.3 dB 850MHz 14.9 dB 1950MHz 14.0 dB 2400MHz Output...
