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SGA5489Z Datasheet PDF

RFMD SGA5489Z

The SGA5489Z is a high performance SiGe HBT MMIC Amplifier. The heterojunction increases breakdown voltage and minimizes leakage current between junctions.
Part No. SGA5489Z
Datasheet SGA5489Z Download
Manufacturer
RFMD
Description CASCADABLE SiGe HBT MMIC AMPLIFIER
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SGA5489Z datasheet page 1 preview

DESCRIPTION

A Darlington configuration featuring one-micron emitters provides high FT and excellent thermal performance. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation. Gain (dB) Return Loss (dB) Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS  SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT InP HBT RF MEMS LDMOS Gain & Return Loss vs. Frequency 24 VD= 3.3 V, ID= 60 mA (Typ.) GAIN 18 ORL 12 IRL 6 0 012345 Frequency (GHz) 0 -10 -20 -30 -40 6

FEATURES

● High Gain: 17.9dB at 1950 MHz
● Cascadable 50Ω
● Operates from Single Supply
● Low Thermal Resistance Package

APPLICATIONS

● PA Driver Amplifier
● Cellular, PCS, GSM, UMTS
● IF Amplifier
● Wireless Data, Satellite Parameter Specification Min. Typ. Max. Unit Condition Small Signal Gain 17.7 19.7 21.7 dB 850MHz 17.9 dB 1950MHz 17.1 dB 2400MHz...
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