RFMD SGA6389Z
The SGA6389Z is a high performance SiGe HBT MMIC Amplifier. The heterojunction increases breakdown voltage and minimizes leakage current between junctions.| Part No. | SGA6389Z |
|---|---|
| Datasheet | SGA6389Z Download |
| Manufacturer |  RFMD |
| Description | CASCADABLE SiGe HBT MMIC AMPLIFIER |
| Buy | Stock & Price |
DESCRIPTION
A Darlington configuration featuring one-micron emitters provides high FT and excellent thermal performance. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation. Gain (dB) Return Loss (dB) Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT InP HBT RF MEMS LDMOS Gain & Return Loss vs. Frequency VD= 4.0 V, ID= 75 mA (Typ.) 20 GAIN 15 ORL 10 IRL 5 0 01234 Frequency (GHz) 0 -10 -20 -30 -40 5FEATURES
● Broadband Operation: DC to 4500 MHz● Cascadable 50
● Operates from Single Supply
● Low Thermal Resistance Package
APPLICATIONS
● PA Driver Amplifier● Cellular, PCS, GSM, UMTS
● IF Amplifier
● Wireless Data, Satellite Parameter Specification Min. Typ. Max. Unit Condition Small Signal Gain 14.1 15.5 17.3 dB 850MHz 14.0 dB 1950MHz 13.3 dB 24...
