RFMD SGA6489Z
The SGA6489Z is a high performance SiGe HBT MMIC Amplifier. The heterojunction increases breakdown voltage and minimizes leakage current between junctions.| Part No. | SGA6489Z |
|---|---|
| Datasheet | SGA6489Z Download |
| Manufacturer |  RFMD |
| Description | CASCADABLE SiGe HBT MMIC AMPLIFIER |
| Buy | Stock & Price |
DESCRIPTION
A Darlington configuration featuring one-micron emitters provides high FT and excellent thermal performance. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation. Gain (dB) Return Loss (dB) Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT InP HBT RF MEMS LDMOS Gain & Return Loss vs. Frequency VD= 5.1 V, ID= 75 mA (Typ.) 24 GAIN 18 ORL 12 IRL 6 0 01234 Frequency (GHz) 0 -10 -20 -30 -40 5FEATURES
● High Gain: 17.5dB at 1950 MHz● Cascadable 50
● Operates from Single Supply
● Low Thermal Resistance Package
APPLICATIONS
● PA Driver Amplifier● Cellular, PCS, GSM, UMTS
● IF Amplifier
● Wireless Data, Satellite Parameter Specification Min. Typ. Max. Unit Condition Small Signal Gain 18.4 20.1 22.4 dB 850MHz 17.5 dB 1950MHz 16.5 dB 2400MHz...
