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SGA7489Z Datasheet PDF

RFMD SGA7489Z

The SGA7489Z is a high performance SiGe HBT MMIC Amplifier. The heterojunction increases breakdown voltage and minimizes leakage current between junctions.
Part No. SGA7489Z
Datasheet SGA7489Z Download
Manufacturer
RFMD
Description DC to 3000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK
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SGA7489Z datasheet page 1 preview

DESCRIPTION

A Darlington configuration featuring one-micron emitters provides high FT and excellent thermal performance. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation. Gain (dB) Return Loss & Isolation (dB) Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS  SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT InP HBT RF MEMS LDMOS Gain, Return Loss, and Isolation vs. Frequency VD=5.0V, ID=115mA (Typ), TLEAD=+25C 30 25 Gain 20 Input Return Loss 15 10 Output Return Loss 5 Isolation 0 0 500 1000 1500 2000 Frequency (MHz) 2500 0 -5 -10 -15 -20 -25 -30 3000

FEATURES

● DC to 3000MHz Operation
● Very High IF Output IP3: 39dBm at 100MHz
● High Output IP3: +35.5dBm typ. at 850MHz
● Low Noise Figure: 3.3dB typ. at 1950MHz

APPLICATIONS

● Oscillator Amplifiers
● PA for Low/Medium Power

APPLICATIONS

● IF/RF Buffer Amplifier
● Drivers for CATV Amplifiers
● LO Driver Amplifier Parameter Specification Min.
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