RFMD SGA7489Z
The SGA7489Z is a high performance SiGe HBT MMIC Amplifier. The heterojunction increases breakdown voltage and minimizes leakage current between junctions.DESCRIPTION
A Darlington configuration featuring one-micron emitters provides high FT and excellent thermal performance. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation. Gain (dB) Return Loss & Isolation (dB) Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT InP HBT RF MEMS LDMOS Gain, Return Loss, and Isolation vs. Frequency VD=5.0V, ID=115mA (Typ), TLEAD=+25C 30 25 Gain 20 Input Return Loss 15 10 Output Return Loss 5 Isolation 0 0 500 1000 1500 2000 Frequency (MHz) 2500 0 -5 -10 -15 -20 -25 -30 3000FEATURES
● DC to 3000MHz Operation● Very High IF Output IP3: 39dBm at 100MHz
● High Output IP3: +35.5dBm typ. at 850MHz
● Low Noise Figure: 3.3dB typ. at 1950MHz
APPLICATIONS
● Oscillator Amplifiers● PA for Low/Medium Power
APPLICATIONS
● IF/RF Buffer Amplifier● Drivers for CATV Amplifiers
● LO Driver Amplifier Parameter Specification Min.