RFMD SGC2363Z
SGC2363Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with a patented active-bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 3V supply, the SGC2363Z does not require a dropping resistor as compared to typical Darlington amplifiers.| Part No. | SGC2363Z |
|---|---|
| Datasheet | SGC2363Z Download |
| Manufacturer |  RFMD |
| Description | 50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK |
| Buy | Stock & Price |
DESCRIPTION
RFMD’s The SGC2363Z is designed for high linearity 3V gain block applications that require small size and minimal external components. It is internally matched to 50. Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS Gain, RL (dB) Gain & Return Loss VD = 3V, ID = 26mA 30 S21 20 10 Bias Tee Data, ZS = ZL = 50 Ohms, TL = 25C 0 -10 S22 -20 S11 -30 0 0.5 1 1.5 2 2.5 3 3.5 Frequency (GHz) 4FEATURES
● Single, Fixed 3V Supply● No Dropping Resistor Required
● Patented Self-Bias Circuitry
● P1dB=10.1dBm at 1950MHz
● OIP3=23dBm at 1950MHz
● Robust 1000V ESD, Class 1C HBM
APPLICATIONS
● PA Driver Amplifier● Cellular, PCS, GSM, UMTS, WCDMA
● IF Amplifier
● Wireless Data, Satellite Parameter Specification Min. Typ. Max. Unit Small Signal Gain 15.5 17.0 18.5 dB 850MHz 11.6 13.1 14.6 dB 1950MHz 12.3 dB 2400MHz Output Power at 1dB Compression 10.4 dBm 850 MHz 9.1 10.1 dBm 1950 MHz 9.6 dBm 2400...
