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SPA-1426Z - 0.7GHz to 2.2GHz 1W InGaP HBT AMPLIFIER

General Description

RFMD’s SPA-1426Z is a high linearity single-stage class A Heterojunction Bipolar Transistor (HBT) power amplifier.

The SPA-1426Z is made with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability.

Key Features

  • an input power detector, on/off power control, ESD protection, excellent overall robustness and a hand reworkable and thermally enhanced SOF-26 package. Optimum Technology Matching® Applied GaAs HBT GaAs MESFET 9 InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS (dBc) ACP versus Channel Power, 2140MHz, W-CDMA -35.0 -40.0 -45.0 -40°C 25°C 85°C -50.0 -55.0 -60.0 -65.0 -70.0 -75.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0 Channel Power Out (dBm) Features.

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Other Datasheets by RF Micro Devices (now Qorvo)

Part Number Description
SPA-1526Z 0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER
SPA1526Z 0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER

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PreliminarySPA-1426Z 0.7GHz to 2.2GHz 1W InGaP HBT Amplifier SPA-1426Z 0.7GHz to 2.2GHz 1W InGaP HBT AMPLIFIER RoHS Compliant and Pb-Free Product Package: SOF-26 Product Description RFMD’s SPA-1426Z is a high linearity single-stage class A Heterojunction Bipolar Transistor (HBT) power amplifier. The SPA-1426Z is made with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. It is well suited for use as a driver stage in macro/micro-cell infrastructure equipment, or as the final output stage in pico-cell infrastructure equipment. It features an input power detector, on/off power control, ESD protection, excellent overall robustness and a hand reworkable and thermally enhanced SOF-26 package.