SPA-1426Z Datasheet PDF

RFMD SPA-1426Z

SPA-1426Z is a high linearity single-stage class A Heterojunction Bipolar Transistor (HBT) power amplifier. The SPA-1426Z is made with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. It is well suited for use as a driver stage in macro/micro-cell infrastructure equipment, or as the final output stage in pico-cell infrastructure equipment.

Part No.	SPA-1426Z
Datasheet	SPA-1426Z Download
Manufacturer	RFMD
Description	0.7GHz to 2.2GHz 1W InGaP HBT AMPLIFIER
Buy	Stock & Price

DESCRIPTION

RFMD’s It features an input power detector, on/off power control, ESD protection, excellent overall robustness and a hand reworkable and thermally enhanced SOF-26 package. Optimum Technology Matching® Applied GaAs HBT GaAs MESFET 9 InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS (dBc) ACP versus Channel Power, 2140MHz, W-CDMA -35.0 -40.0 -45.0 -40°C 25°C 85°C -50.0 -55.0 -60.0 -65.0 -70.0 -75.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0 Channel Power Out (dBm)

FEATURES

P1dB=29.5dBm @ 2140MHz ACP = -65dBc with 17.0dBm Channel Power @ 2140MHz Low Thermal Resistance Package Power Up/Down Control<1μs Robust Class 1C ESD

APPLICATIONS

Macro/Micro-Cell Driver Stage Pico-Cell Output Stage GSM, CDMA, TDSCDMA, WCDMA, IS-95 Single and Multi-Carrier Appli- cations Parameter Specification Min. Typ. Small Signal Gain Output Power at 1dB Compression Output Third Order Intercept Point, 18dBm per tone, 1MHz spacing W-CDMA Channel Power -65dB...