DESCRIPTION
RFMD’s It features an input power detector, on/off power control, ESD protection, excellent overall robustness, and a hand reworkable and thermally enhanced SOF-26 package. Optimum Technology Matching® Applied GaAs HBT GaAs MESFET 9 InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT dBc ACP versus Channel Power, Over Frequency, -35.0 WCDMA 880MHz -40.0 1960MHz 2140MHz -45.0 -50.0 -55.0 -60.0 GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS -65.0 -70.0 -75.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 POUT (dBm) FEATURES
P1dB=32dBm @ 2140MHz ACP=-65dBc with 18.4dBm Channel Power @ 2140MHz Low Thermal Resistance Package Power Up/Down Control<1μs Robust Class 1C ESD APPLICATIONS
Macro/Micro-Cell Driver Stage Pico-Cell Output Stage GSM, CDMA, TDSCDMA, WCDMA, IS-95 Single and Multi-Carrier Appli- cations Parameter Small Signal Power Gain Output Power at 1dB Compression Output Third Order Intercept Point WCDMA Channel Power -65dBc ACP -55dBc ACP -65dBc ACP -55dBc ACP -65dBc ACP -55...
RFMD
