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SPA-1526Z - 0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER

Description

RFMD’s SPA-1526Z is a high linearity single-stage class A Heterojunction Bipolar Transistor (HBT) power amplifier.

The SPA-1526Z is made with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability.

Features

  • an input power detector, on/off power control, ESD protection, excellent overall robustness, and a hand reworkable and thermally enhanced SOF-26 package. Optimum Technology Matching® Applied GaAs HBT GaAs MESFET 9 InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT dBc ACP versus Channel Power, Over Frequency, -35.0 WCDMA 880MHz -40.0 1960MHz 2140MHz -45.0 -50.0 -55.0 -60.0 GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS -65.0 -70.0 -75.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 POUT (dBm) Features.

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Datasheet Details

Part number SPA-1526Z
Manufacturer RFMD
File Size 371.50 KB
Description 0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER
Datasheet download datasheet SPA-1526Z Datasheet
Additional preview pages of the SPA-1526Z datasheet.

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Other Datasheets by RFMD
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Full PDF Text Transcription

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PreliminarySPA-1526Z 0.7GHz to 2.2GHz 2W InGaP HBT Amplifier SPA-1526Z 0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free Product Package: SOF-26 Product Description RFMD’s SPA-1526Z is a high linearity single-stage class A Heterojunction Bipolar Transistor (HBT) power amplifier. The SPA-1526Z is made with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. It is well suited for use as a driver stage in macro/micro-cell infrastructure equipment, or as the final output stage in pico-cell infrastructure equipment. It features an input power detector, on/off power control, ESD protection, excellent overall robustness, and a hand reworkable and thermally enhanced SOF-26 package.
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