SPA1526Z - 0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER

Product Overview

RFMD

Part number	SPA1526Z
Manufacturer	RFMD
File Size	573.23 KB
Description	0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER
Datasheet	SPA1526Z Datasheet
Additional preview pages of the SPA1526Z datasheet.

RFMD’s SPA1526Z is a high linearity single-stage class A Heterojunction Bipolar Transistor (HBT) power amplifier.

The SPA1526Z is made with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability.

an input power detector, on/off power control, ESD protection, excellent overall robustness, and a hand reworkable and thermally enhanced SOF-26 package. Optimum Technology Matching® Applied GaAs HBT GaAs MESFET.
InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT InP HBT RF MEMS LDMOS ACP versus Channel Power, Over Frequency, -35.0 WCDMA 880MHz -40.0 1960MHz 2140MHz -45.0 -50.0 -55.0 -60.0 -65.0 -70.0 -75.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 PO.

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Published: Nov 28, 2014 |