RFMD SPA1526Z
SPA1526Z is a high linearity single-stage class A Heterojunction Bipolar Transistor (HBT) power amplifier. The SPA1526Z is made with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. It is well suited for use as a driver stage in macro/micro-cell infrastructure equipment, or as the final output stage in pico-cell infrastructure equipment.| Part No. | SPA1526Z |
|---|---|
| Datasheet | SPA1526Z Download |
| Manufacturer |  RFMD |
| Description | 0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER |
| Buy | Stock & Price |
DESCRIPTION
RFMD’s It features an input power detector, on/off power control, ESD protection, excellent overall robustness, and a hand reworkable and thermally enhanced SOF-26 package. Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT InP HBT RF MEMS LDMOS ACP versus Channel Power, Over Frequency, -35.0 WCDMA 880MHz -40.0 1960MHz 2140MHz -45.0 -50.0 -55.0 -60.0 -65.0 -70.0 -75.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 POUT (dBm)FEATURES
● P1dB=32dBm @ 2140MHz● ACP=-65dBc with 18.4dBm Channel Power @ 2140MHz
● Low Thermal Resistance Package
● Power Up/Down Control<1s
● Robust Class 1C ESD
APPLICATIONS
● Macro/Micro-Cell Driver Stage● Pico-Cell Output Stage
● GSM, CDMA, TDSCDMA, WCDMA, IS-95
● Single and Multi-Carrier Appli- cations Parameter Small Signal Power Gain Output Power at 1dB Compression Output Third Order Intercept Point, 18dBm per Tone, 1MHz Spacing WCDMA Channel Power -65dBc ACP -55dBc...
