SPA1526Z Description
RFMD’s SPA1526Z is a high linearity single-stage class A Heterojunction Bipolar Transistor (HBT) power amplifier. The SPA1526Z is made with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal bination of low cost and high reliability. It is well suited for use as a driver stage in macro/micro-cell infrastructure equipment, or as the final output stage in pico-cell infrastructure equipment.
SPA1526Z Key Features
- InGaP HBT
- P1dB=32dBm @ 2140MHz
- ACP=-65dBc with 18.4dBm
- Low Thermal Resistance
- Power Up/Down Control<1s
- Robust Class 1C ESD