Datasheet4U Logo Datasheet4U.com

SPA1526Z - 0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER

General Description

RFMD’s SPA1526Z is a high linearity single-stage class A Heterojunction Bipolar Transistor (HBT) power amplifier.

The SPA1526Z is made with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability.

Key Features

  • an input power detector, on/off power control, ESD protection, excellent overall robustness, and a hand reworkable and thermally enhanced SOF-26 package. Optimum Technology Matching® Applied GaAs HBT GaAs MESFET.
  • InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT InP HBT RF MEMS LDMOS ACP versus Channel Power, Over Frequency, -35.0 WCDMA 880MHz -40.0 1960MHz 2140MHz -45.0 -50.0 -55.0 -60.0 -65.0 -70.0 -75.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 PO.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SPA15N60C3 Cool MOS Power Transistor Infineon Technologies
SPA15N60C3 N-Channel MOSFET INCHANGE
SPA15N60CFD N-Channel MOSFET INCHANGE
SPA15N65C3 Power Transistor Infineon Technologies
SPA15N65C3 N-Channel MOSFET INCHANGE

Other Datasheets by RF Micro Devices (now Qorvo)

Part Number Description
SPA-1426Z 0.7GHz to 2.2GHz 1W InGaP HBT AMPLIFIER
SPA-1526Z 0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SPA1526Z 0.7GHz to 2.2GHz 2W InGaP HBT SPA1526ZAmplifier 0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER NOT FOR NEW DESIGNS Package: SOF-26 NOT FOR NEW dBc DESIGNS Product Description RFMD’s SPA1526Z is a high linearity single-stage class A Heterojunction Bipolar Transistor (HBT) power amplifier. The SPA1526Z is made with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. It is well suited for use as a driver stage in macro/micro-cell infrastructure equipment, or as the final output stage in pico-cell infrastructure equipment. It features an input power detector, on/off power control, ESD protection, excellent overall robustness, and a hand reworkable and thermally enhanced SOF-26 package.