• Part: SPB2026Z
  • Description: 0.7GHz to 2.2GHz 2W InGaP AMPLIFIER
  • Manufacturer: RF Micro Devices
  • Size: 460.56 KB
Download SPB2026Z Datasheet PDF
RF Micro Devices
SPB2026Z
SPB2026Z is 0.7GHz to 2.2GHz 2W InGaP AMPLIFIER manufactured by RF Micro Devices.
SPB2026Z 0.7GHz to 2.2GHz 2W InGaP Amplifier 0.7GHz to 2.2GHz 2W InGaP AMPLIFIER NOT FOR NEW DESIGNS Package: SOF-26 NOT FOR NEW DESIGNS Product Description RFMD’s SPB2026Z is a high linearity single-stage class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a surface-mountable plastic encapsulated package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal bination of low cost and high reliability. This product is well suited for use as a driver stage in macro/micro-cell infrastructure equipment or as the final output stage in pico-cell infrastructure equipment. It can run from a 3V to 6V supply....