RFMD SPB2026Z
SPB2026Z is a high linearity single-stage class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a surface-mountable plastic encapsulated package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is well suited for use as a driver stage in macro/micro-cell infrastructure equipment or as the final output stage in pico-cell infrastructure equipment.| Part No. | SPB2026Z |
|---|---|
| Datasheet | SPB2026Z Download |
| Manufacturer |  RFMD |
| Description | 0.7GHz to 2.2GHz 2W InGaP AMPLIFIER |
| Buy | Stock & Price |
DESCRIPTION
RFMD’s It can run from a 3V to 6V supply. It is prematched to ~5 on the input for broadband performance and ease of matching at the board level. It features an input power detector, on/off power control, ESD protection, excellent over- Optimum Technology Matching® Applied all robustness and a hand reworkable and thermally enhanced SOF-26 package. This product is RoHS and WEEE compliant. GaAs HBT GaAs MESFET p Vcc = 5V InGaP HBT SiGe BiCMOS Functional Block Diagram Si BiCMOS SSZPPB- 2-2002266 SiGe HBT GaAs pHEMT Si CMOS RFIN V bias = 5V A c tiv e Bias RFOUT Si BJT GaN HEMT RF MEMS Pow er Up/Dow n Co n tr o l Pow er Detec torFEATURES
● P1dB=33.8dBm at 5V, 1960 MHz● ACP=-45dBc with 25dBm Channel Power at 1960MHz
● On-Chip Input Power Detector
● Low Thermal Resistance Package
● Power Up/Down Control <1s
● Robust Class 1C ESD
APPLICATIONS
● Macro/Micro-Cell Driver Stage● Pico-Cell Output Stage
● GSM, CDMA, TDSCDMA, WCDMA
● Single and Multi-Carrier Appli- cations Parameter Small Signal Gain Output Power at 1dB Compression Third Order Supression WCDMA Channel Power WCDMA Channel Power Min.
