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SPB2026Z - 0.7GHz to 2.2GHz 2W InGaP AMPLIFIER

General Description

package.

Key Features

  • an input power detector, on/off power control, ESD protection, excellent over- Optimum Technology Matching® Applied all robustness and a hand reworkable and thermally enhanced SOF-26 package. This product is RoHS and WEEE compliant. GaAs HBT GaAs MESFET p Vcc = 5V.
  • InGaP HBT SiGe BiCMOS Functional Block Diagram Si BiCMOS SSZPPB- 2-2002266 SiGe HBT GaAs pHEMT Si CMOS RFIN V bias = 5V A c tiv e Bias RFOUT Si BJT GaN HEMT RF MEMS Pow er Up/Dow n Co n tr o l Pow er Detec to.

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Other Datasheets by RF Micro Devices (now Qorvo)

Part Number Description
SPB-2026Z 0.7 GHz to 2.2 GHz 2W InGaP Amplifier

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SPB2026Z 0.7GHz to 2.2GHz 2W InGaP Amplifier SPB2026Z 0.7GHz to 2.2GHz 2W InGaP AMPLIFIER NOT FOR NEW DESIGNS Package: SOF-26 NOT FOR NEW DESIGNS Product Description RFMD’s SPB2026Z is a high linearity single-stage class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a surface-mountable plastic encapsulated package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is well suited for use as a driver stage in macro/micro-cell infrastructure equipment or as the final output stage in pico-cell infrastructure equipment. It can run from a 3V to 6V supply.