SPB2026Z Overview
RFMD’s SPB2026Z is a high linearity single-stage class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a surface-mountable plastic encapsulated package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal bination of low cost and high reliability. This product is well suited for use as a driver stage in macro/micro-cell infrastructure equipment or as...
SPB2026Z Key Features
- InGaP HBT
- P1dB=33.8dBm at 5V, 1960 MHz
- ACP=-45dBc with 25dBm Channel Power at 1960MHz
- On-Chip Input Power Detector
- Low Thermal Resistance
- Power Up/Down Control <1s
- Robust Class 1C ESD