• Part: SPF-5189Z
  • Description: GaAs pHEMT LOW NOISE MMIC AMPLIFIER
  • Manufacturer: RF Micro Devices
  • Size: 753.04 KB
Download SPF-5189Z Datasheet PDF
RF Micro Devices
SPF-5189Z
SPF-5189Z is GaAs pHEMT LOW NOISE MMIC AMPLIFIER manufactured by RF Micro Devices.
Description The SPF-5189Z is a high performance p HEMT MMIC LNA designed for operation from 50MHz to 4000MHz. The on-chip active bias network provides stable current over temperature and process threshold voltage variations. The SPF-5189Z offers ultra-low noise figure and high linearity performance in a gain block configuration. Its single-supply operation and integrated matching networks make implementation remarkably simple. A high maximum input power specification make it ideal for high dynamic range receivers. Gain (d B) NF (d B) Optimum Technology Matching® Applied Ga As HBT Ga As MESFET In Ga P HBT Si Ge Bi CMOS Si Bi CMOS Si Ge HBT 9 Ga As p HEMT Si CMOS Si BJT Ga N HEMT In P HBT RF MEMS LDMOS 16 15 14 13 12 11 10 9 8 7 6 Gain and NF versus Frequency Gain 1.8 S21 Frequency (GHz) 0.0 2.2 Features - Ultra-Low Noise Figure=0.60d B at 900MHz - Gain=18.7d B at 900MHz - High Linearity: OIP3=39.5d Bm at 1960MHz - P1d B=22.7d Bm at 1960MHz - Single-Supply Operation: 5V at IDQ = 90 m A - Flexible Biasing Options: 3V to 5V, Adjustable Current - Broadband Internal Matching Applications - Cellular, PCS, W-CDMA, ISM, Wi MAX Receivers - PA Driver Amplifier - Low Noise, High Linearity Gain Block Applications Parameter Specification Min. Typ. Max. Unit Small Signal Gain 18.7 d...