RFMD SZP-5026Z
SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor (HBT) power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for use as a driver or final stage power amp for 802.16 equipment in the 4.9GHz to 5.9GHz bands.SZP-5026Z Specifications
- Max Frequency : 5.9GHz
- Max Operating Temp : 85°C
- Min Operating Temp : -40°C
Source:
Octopart
| Part No. | SZP-5026Z |
|---|---|
| Datasheet | SZP-5026Z Download |
| Manufacturer |  RFMD |
| Description | 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER |
| Buy | Stock & Price |
DESCRIPTION
RFMD’s It is pre-matched on both ports to simplify external application circuit design. It features an input power detector, on/off power control, ESD protection, excellent overall robustness, and a hand reworkable and thermally enhanced surface-mount SOF-26 package. Optimum Technology Matching® Applied GaAs HBT GaAs MESFET VccFEATURES
P1dB =33dBm @ 5V 802.11a 54Mb/s Class AB Performance POUT =25dBm @ 2.5% EVM, 5.9GHz, 5V, 680mA On-Chip Input Power Detector Internally Prematched Input and Output Proprietary Low Thermal Resistance Package Power Up/Down Control<1μs 9 InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS Vbias RFIN SZP-5026 RFOUT APPLICATIONS
Active Bias 802.16 WiMAX Driver or Output Stage 5GHz 802.11 WLAN and ISMAPPLICATIONS
Power Up/Down Control Power Detector Parameter Frequency of Operation Output Power at 1dB Compression Small Signal Gain EVM at 25dBm Output Power Third Order Suppression Noise Figure Worst Case Input Return Loss Worst Case Output Return Loss Output Voltage Range Quiescent Current Power Up Control Current VCC Leakage Current Min.
