B1436
Features
1) Low VCE(sat). VCE(sat) =
- 0.35V (Typ.) (IC/IB =
- 4A /
- 0.1A) 2) Excellent DC current gain characteristics. 3) plements the 2SD2098 / 2SD2118 / 2SD2097.
2SB1412
1.5±0.3
6.5±0.2 0.2 5.1+
- 0.1 C0.5
0.2 2.3+
- 0.1 0.5±0.1
0.3 5.5+
- 0.1
(1) 0.4±0.1 1.5±0.1
(2)
(3) 0.4±0.1 1.5±0.1
0.1 0.4+
- 0.05
0.75 0.9
0.65±0.1
0.5±0.1 3.0±0.2
0.55±0.1 2.3±0.2 2.3±0.2 1.0±0.2
!Structure Epitaxial planar type PNP silicon transistor
ROHM : MPT3 EIAJ : SC-62
(1) Base (2) Collector (3) Emitter
(1) (2) (3)
ROHM : CPT3 EIAJ : SC-63
(1) Base (2) Collector (3) Emitter
Abbreviated symbol: BH∗
2SB1326
6.8±0.2
2.5±0.2
0.65Max.
0.5±0.1 (1) (2) (3)
2.54 2.54 1.05
14.5±0.5
4.4±0.2
0.45±0.1...
