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B1436 - 2SB1436

Key Features

  • 1) Low VCE(sat). VCE(sat) =.
  • 0.35V (Typ. ) (IC/IB =.
  • 4A /.
  • 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2098 / 2SD2118 / 2SD2097. 2SB1412 1.5±0.3 6.5±0.2 0.2 5.1+.
  • 0.1 C0.5 0.2 2.3+.
  • 0.1 0.5±0.1 0.3 5.5+.
  • 0.1 (1) 0.4±0.1 1.5±0.1 (2) (3) 0.4±0.1 1.5±0.1 0.1 0.4+.
  • 0.05 0.75 0.9 0.65±0.1 0.5±0.1 3.0±0.2 0.55±0.1 2.3±0.2 2.3±0.2 1.0±0.2 !Structure Epitaxial planar type PNP silicon transistor ROHM : MPT3.

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Datasheet Details

Part number B1436
Manufacturer ROHM Electronics
File Size 119.72 KB
Description 2SB1436
Datasheet download datasheet B1436 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SB1386 / 2SB1412 / 2SB1326 Transistors www.datasheet4u.com Low frequency transistor (−20V, −5A) 2SB1386 / 2SB1412 / 2SB1326 !External dimensions (Units : mm) 2SB1386 0.5±0.1 0.2 4.5+ −0.1 1.6±0.1 0.2 1.5 + −0.1 1.0±0.2 !Features 1) Low VCE(sat). VCE(sat) = −0.35V (Typ.) (IC/IB = −4A / −0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2098 / 2SD2118 / 2SD2097. 2SB1412 1.5±0.3 6.5±0.2 0.2 5.1+ −0.1 C0.5 0.2 2.3+ −0.1 0.5±0.1 0.3 5.5+ −0.1 (1) 0.4±0.1 1.5±0.1 (2) (3) 0.4±0.1 1.5±0.1 0.1 0.4+ −0.05 0.75 0.9 0.65±0.1 0.5±0.1 3.0±0.2 0.55±0.1 2.3±0.2 2.3±0.2 1.0±0.