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D1858 - 2SD1858

Key Features

  • 1) Low VCE(sat), VCE(sat) = 0.15V (typical). (IC / IB = 500mA / 50mA) 2) Complements the 2SB1132 / 2SB1237. FStructure Epitaxial planar type NPN silicon transistor FExternal dimensions (Units: mm) FAbsolute maximum ratings (Ta = 25_C) (96-207-D12) 249 Transistors FElectrical characteristics (Ta = 25_C) 2SD1664 / 2SD1858 www. DataSheet4U. com FPackaging specifications and hFE hFE values are classified as follows : FElectrical characteristic curves 250 Transistors 2SD1664 / 2SD1858 www.

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Datasheet Details

Part number D1858
Manufacturer ROHM Electronics
File Size 147.71 KB
Description 2SD1858
Datasheet download datasheet D1858 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Transistors Medium Power Transistor (32V, 1A) www.DataSheet4U.com 2SD1664 / 2SD1858 FFeatures 1) Low VCE(sat), VCE(sat) = 0.15V (typical). (IC / IB = 500mA / 50mA) 2) Complements the 2SB1132 / 2SB1237. FStructure Epitaxial planar type NPN silicon transistor FExternal dimensions (Units: mm) FAbsolute maximum ratings (Ta = 25_C) (96-207-D12) 249 Transistors FElectrical characteristics (Ta = 25_C) 2SD1664 / 2SD1858 www.DataSheet4U.com FPackaging specifications and hFE hFE values are classified as follows : FElectrical characteristic curves 250 Transistors 2SD1664 / 2SD1858 www.DataSheet4U.