D1963
D1963 is 2SD1963 manufactured by ROHM.
2SD1963
Transistors
Power transistor (50V, 3A)
2SD1963 z Features 1) Low saturation voltage, typically .. VCE(sat) =
- 0.45V (Max.) at IC/IB =
- 1.5A /
- 0.15A. 2) Excellent DC current gain characteristics. 3) plements the 2SB1308. z External dimensions (Unit : mm)
MPT3
4.5 1.6
(1)
(2)
(3)
2.5 4.0
0.4 1.5
0.5 1.5 3.0
(1)Base (2)Collector (3)Emitter z Absolute maximum ratings (Ta=25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Limits 50 20 6 3 5 0.5 2.0 150
- 55 to 150 Unit V V V A(DC) A(Pulse) W W
∗1 ∗2
Collector power dissipation Junction temperature Storage temperature
PC Tj Tstg
°C °C
∗ ∗
1 Single pulse, Pw=10ms 2 When mounted on a 40×40×0.7mm ceramic board. z Electrical characteristics (Ta=25°C)
Parameter Collector-base breakdown voltage Symbol BVCBO Min. 50 20 6
- - 180
- -
- Typ.
- -
- -
- - 0.25 150 35 Max.
- -
- 0.5 0.5 560 0.45
- - Unit V V V IC=50µA IC= 1m A IE= 50µA VCB=40V VEB=5V VCE=2V, IC=0.5A IC/IB=1.5A/ 0.15A VCE=6V, IE=
- 50m A, f=100MHz VCB=20V, IE=0A, f=1MHz...
