Datasheet4U Logo Datasheet4U.com

D1963 - 2SD1963

Key Features

  • 1) Low saturation voltage, typically www. DataSheet4U. com VCE(sat) =.
  • 0.45V (Max. ) at IC/IB =.
  • 1.5A /.
  • 0.15A. 2) Excellent DC current gain characteristics. 3) Complements the 2SB1308. zExternal dimensions (Unit : mm) MPT3 4.5 1.6 0.5 1.5 (1) (2) (3) 1.0 2.5 4.0 0.4 0.4 1.5 0.5 1.5 3.0 0.4 (1)Base (2)Collector (3)Emitter zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VC.

📥 Download Datasheet

Datasheet Details

Part number D1963
Manufacturer ROHM Electronics
File Size 94.75 KB
Description 2SD1963
Datasheet download datasheet D1963 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
D1960 2SD1960 Rohm
D1961SH Fast Hard Drive Diode Infineon
D1964 2DD1964 Panasonic Semiconductor
D1902 2SD1902 Sanyo
D1903 PNP/NPN Epitaxial Planar Silicon Transistors Sanyo

Other Datasheets by ROHM Electronics

Part Number Description
D1961 2SD1961

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2SD1963 Transistors Power transistor (50V, 3A) 2SD1963 zFeatures 1) Low saturation voltage, typically www.DataSheet4U.com VCE(sat) = −0.45V (Max.) at IC/IB = −1.5A / −0.15A. 2) Excellent DC current gain characteristics. 3) Complements the 2SB1308. zExternal dimensions (Unit : mm) MPT3 4.5 1.6 0.5 1.5 (1) (2) (3) 1.0 2.5 4.0 0.4 0.4 1.5 0.5 1.5 3.0 0.4 (1)Base (2)Collector (3)Emitter zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Limits 50 20 6 3 5 0.5 2.0 150 −55 to 150 Unit V V V A(DC) A(Pulse) W W ∗1 ∗2 Collector power dissipation Junction temperature Storage temperature PC Tj Tstg °C °C ∗ ∗ 1 Single pulse, Pw=10ms 2 When mounted on a 40×40×0.