2SAR562F3 Datasheet PDF - ROHM Middle Power Transistors Specs

2SAR562F3 - Middle Power Transistors

Datasheet Summary

Features

1) Suitable for Middle Power Driver. 2) Low VCE(sat) 　　VCE(sat)=-300mV(Max. ). 　　(IC/IB=-3A/-150mA) 3) High collector current. 　　IC=-6A(max),ICP=-7A(max) 4) Leadless small SMD package (HUML2020L3) 　　Excellent thermal and electrical conductivity. lOutline 　 DFN2020-3S 　 HUML2020L3 lInner circuit 　　　　　 Datasheet l.

Datasheet Details

Part number	2SAR562F3
Manufacturer	ROHM
File Size	1.02 MB
Description	Middle Power Transistors
Datasheet	2SAR562F3 Datasheet
Additional preview pages of the 2SAR562F3 datasheet.

📁 Similar Datasheet

2SAR572D - Silicon PNP Power Transistor (Inchange Semiconductor)

2SAR573D - Silicon PNP Power Transistor (Inchange Semiconductor)

2SAR574D - Silicon PNP Power Transistor (Inchange Semiconductor)

2SAR586D - Silicon PNP Power Transistor (Inchange Semiconductor)

2SA-10 - Integrated 2-Axis Hall Sensor (SENTRON)

2SA0683 - Silicon PNP Transistor (Panasonic Semiconductor)

2SA0684 - Silicon PNP Transistor (Panasonic Semiconductor)

2SA0719 - Silicon PNP Transistor (Panasonic)

2SA0720 - Silicon PNP Transistor (Panasonic)

2SA0720A - Silicon PNP Transistor (Panasonic)

Full PDF Text Transcription

Click to expand full text

2SAR562F3 PNP -6.0A -30V Middle Power Transistor Parameter VCEO IC Value -30V -6A lFeatures 1) Suitable for Middle Power Driver. 2) Low VCE(sat) 　　VCE(sat)=-300mV(Max.). 　　(IC/IB=-3A/-150mA) 3) High collector current. 　　IC=-6A(max),ICP=-7A(max) 4) Leadless small SMD package (HUML2020L3) 　　Excellent thermal and electrical conductivity. lOutline 　 DFN2020-3S 　 HUML2020L3 lInner circuit 　　　　　 Datasheet lApplication LOW FREQUENCY AMPLIFIER lPackaging specifications Part No. Package Package size 2SAR562F3 DFN2020-3S (HUML2020L3) 2020 Taping code Reel size Tape width Quantity (mm) (mm) (pcs) Marking TR 180 8 3000 MT 　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　 www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved.

Published: Mar 3, 2017 |