Datasheet4U Logo Datasheet4U.com

BAT54SHM - Schottky Barrier Diode

Key Features

  • 1) Small power mold type (SOT-23) 2) High reliability 3) Low VF lConstruction Silicon epitaxial planar type 5B ROHM : SSD3 JEDEC : SOT-23 JEITA : - lTaping Dimensions (Unit : mm) 2.4 1.0MIN SOT-23 0.8MIN lStructure (3) (1) Anode (2) Cathode (3) Anode (1) (2) Cathode lAbsolute Maximum Ratings (Ta= 25°C) Parameter Symbol Repetitive peak reverse voltage Reverse voltage Forward current Repetitive peak forward current Non-repetitive forward surge current VRM VR IF IFRM IFSM Junction tempe.

📥 Download Datasheet

Datasheet Details

Part number BAT54SHM
Manufacturer ROHM
File Size 517.67 KB
Description Schottky Barrier Diode
Datasheet download datasheet BAT54SHM Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BAT54SH Small Signal Schottky diode CYStech Electronics
BAT54SHE3 250mW 30V Schottky Barrier Diode MCC
BAT54S Schottky Diodes Fairchild Semiconductor
BAT54S SURFACE MOUNT SCHOTTKY BARRIER DIODE WON-TOP
BAT54S Schottky barrier diodes nexperia

Other Datasheets by ROHM

Part Number Description
BAT54AHM Schottky Barrier Diode
BAT54CHM Schottky Barrier Diode
BAT54HM Schottky Barrier Diode
BAT54HMFH Schottky Barrier Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Schottky Barrier Diode BAT54SHM Data Sheet lApplication Small current rectification lDimensions (Unit : mm) lLand Size Figure (Unit : mm) 1.9 lFeatures 1) Small power mold type (SOT-23) 2) High reliability 3) Low VF lConstruction Silicon epitaxial planar type 5B ROHM : SSD3 JEDEC : SOT-23 JEITA : - lTaping Dimensions (Unit : mm) 2.4 1.0MIN SOT-23 0.8MIN lStructure (3) (1) Anode (2) Cathode (3) Anode (1) (2) Cathode lAbsolute Maximum Ratings (Ta= 25°C) Parameter Symbol Repetitive peak reverse voltage Reverse voltage Forward current Repetitive peak forward current Non-repetitive forward surge current VRM VR IF IFRM IFSM Junction temperature Tj Storage temperature Tstg Conditions Duty≦0.5 Direct reverse voltage Direct forward current, Per diode t ≦1s, Duty≦0.