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BS2100F - 600V High voltage High & Low-side / Gate Driver

Datasheet Summary

Description

The BS2100F is a monolithic high and low side gate drive IC, which can drive high speed power MOSFET and IGBT driver with bootstrap operation.

The floating channel can be used to driven an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600V.

Features

  • Floating Channels for Bootstrap Operation to +600V.
  • Gate drive supply range from 10V to 18V.
  • Built-in Under Voltage Lockout for Both Channels.
  • 3.3V and 5.0V Input Logic Compatible.
  • Matched Propagation Delay for Both Channels.
  • Output in phase with input.

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Datasheet preview – BS2100F

Datasheet Details

Part number BS2100F
Manufacturer ROHM
File Size 812.97 KB
Description 600V High voltage High & Low-side / Gate Driver
Datasheet download datasheet BS2100F Datasheet
Additional preview pages of the BS2100F datasheet.

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Full PDF Text Transcription

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600V High voltage High & Low-side, Gate Driver BS2100F General Description The BS2100F is a monolithic high and low side gate drive IC, which can drive high speed power MOSFET and IGBT driver with bootstrap operation. The floating channel can be used to driven an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600V. The logic inputs can be used 3.3V and 5.0V. The Under Voltage Lockout (UVLO) circuit prevents malfunction when VCC and VBS are lower than the specified threshold voltage. Features  Floating Channels for Bootstrap Operation to +600V  Gate drive supply range from 10V to 18V  Built-in Under Voltage Lockout for Both Channels  3.3V and 5.
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