BS2100F Description
The BS2100F is a monolithic high and low side gate drive IC, which can drive high speed power MOSFET and IGBT driver with bootstrap operation. The floating channel can be used to driven an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600V. The logic inputs can be used 3.3V and 5.0V.
BS2100F Key Features
- Floating Channels for Bootstrap Operation to +600V
- Gate drive supply range from 10V to 18V
- Built-in Under Voltage Lockout for Both Channels
- 3.3V and 5.0V Input Logic patible
- Matched Propagation Delay for Both Channels
- Output in phase with input