BSM250D17P2E004
Features
1) Low surge, low switching loss. 2) High-speed switching possible. 3) Reduced temperature dependence.
6 5
10 NTC
1 3,4 2
Construction This product is a half bridge module consisting of Si C-DMOSFET and Si C-SBD from ROHM.
Dimensions & Pin layout (Unit : mm)
.rohm. © 2018 ROHM Co., Ltd. All rights reserved.
1/10
19.Oct.2018
- Rev.001
Absolute maximum ratings (Tj = 25°C)
Parameter
Symbol
Conditions
Drain
- Source Voltage
VDSS
G-S short
Gate
- Source Voltage (+)
VGSS
D-S short
Gate
- Source Voltage (-) G
- S Voltage (tsurge<300nsec)
Drain Current Note 1)
VGSS VGSSsurge
ID IDRM
D-S short D-S short DC(Tc=60°C) VGS=18V Pulse (Tc = 60°C） 1ms VGS=18V Note 2)
Source Current Note 1)
Total Power Dissipation Note 3) Max Junction Temperature
IS IS ISRM Ptot Tjmax
DC(Tc=60°C) VGS=18V DC(Tc=60°C) VGS=0V Pulse (Tc = 60°C） 1ms VGS=18V Note 2)
Tc = 25°C
Junction Temperature
Tjop
Storage Temperature
Tstg...
