BV1LA025EFJ-C Datasheet | ROHM

Automotive IPD 1ch Low Side Switch Features - Built-in Dual TSD- 1 - AEC-Q100 Qualified- 2 - Built-in Over Current Protection Function(OCP) - Built-in Active Clamp Function - Direct Control Enabled from CMOS Logic IC, etc. - On Resistance RDS(ON) = 25 mΩ (Typ) (when VIN  5 V, IOUT = 2.4 A, Tj  25 C) - Monolithic Power Management IC with the Control Block (CMOS) and Power MOS FET Mounted on a Single Chip - 1 This IC has thermal shutdown (Junction temperature detect) and ΔTj Protection (Power-MOS steep temperature rising detect). - 2 Grade1 Key Specifications On-state Resistance (Tj = 25 °C, Typ) Over Current Limitation Level (Tj = 25 °C, Typ) Output Clamp Voltage (Min) Active Clamp Energy (Tj(START) = 25 °C) 25 mΩ 13 A 42 V 220 m J Package HTSOP-J8 W (Typ) x D (Typ) x H (Max) 4.9 mm x 6.0 mm x 1.0 mm General Description The BV1LA025EFJ-C is an automotive 1ch low side switch IC, which has built-in Dual TSD, OCP and active clamp function. Application - Driving Resistive, Inductive and Capacitive Load Block Diagram Active Clamp Circuit Gate Dual TSD Control  Product structure : Silicon integrated circuit .rohm. © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 - 14 - 001  This product has no designed protection against radioactive...