Datasheet4U Logo Datasheet4U.com

BV1LA025EFJ-C - Automotive IPD 1ch Low-Side Switch

General Description

The BV1LA025EFJ-C is an automotive 1ch low side switch IC, which has built-in Dual TSD, OCP and active clamp function.

Driving Resistive, Inductive and Capacitive Load Block Diagram OUT Active Clamp Circuit IN Gate Dual TSD Control OCP GND  Product structure : Silicon in

Key Features

  • Built-in Dual TSD.
  • 1.
  • AEC-Q100 Qualified.
  • 2.
  • Built-in Over Current Protection Function(OCP).
  • Built-in Active Clamp Function.
  • Direct Control Enabled from CMOS Logic IC, etc.
  • On Resistance RDS(ON) = 25 mΩ (Typ) (when VIN  5 V, IOUT = 2.4 A, Tj  25 C).
  • Monolithic Power Management IC with the Control Block (CMOS) and Power MOS FET Mounted on a Single Chip.
  • 1 This IC has thermal shutdown (Junction temperature detect) and ΔTj Protection (Power-MOS stee.

📥 Download Datasheet

Datasheet Details

Part number BV1LA025EFJ-C
Manufacturer ROHM
File Size 1.91 MB
Description Automotive IPD 1ch Low-Side Switch
Datasheet download datasheet BV1LA025EFJ-C Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Datasheet Automotive IPD 1ch Low Side Switch BV1LA025EFJ-C Features ■ Built-in Dual TSD*1 ■ AEC-Q100 Qualified*2 ■ Built-in Over Current Protection Function(OCP) ■ Built-in Active Clamp Function ■ Direct Control Enabled from CMOS Logic IC, etc. ■ On Resistance RDS(ON) = 25 mΩ (Typ) (when VIN  5 V, IOUT = 2.4 A, Tj  25 C) ■ Monolithic Power Management IC with the Control Block (CMOS) and Power MOS FET Mounted on a Single Chip *1 This IC has thermal shutdown (Junction temperature detect) and ΔTj Protection (Power-MOS steep temperature rising detect).