DTDG23YPFRA - Digital Transistor

Features

1)High DC current gain. 　 (Min.300 at Vo/Io=2V/500mA) 2)Low Vo(ON). 　 (Typ.400mV at Io/II=500mA/5mA) 3)Built-in zener diode gives strong protection 　 against reverse surge by L-load. 　 (an inductive load) lOutline SOT-89 SC-62 　　　　　 (MPT3) 　　　　　　　　　　　　　 lInner circuit l.

ROHM

Datasheet Details

Part number	DTDG23YPFRA
Manufacturer	ROHM
File Size	774.45 KB
Description	Digital Transistor
Datasheet	DTDG23YPFRA Datasheet
Additional preview pages of the DTDG23YPFRA datasheet.

📁 Similar Datasheet

DTDG23YP - Digital Transistors (Guangdong Kexin Industrial)
DTD113E - NPN SILICON BIAS RESISTOR TRANSISTOR (ON Semiconductor)
DTD113Z - NPN DIGITAL TRANSISTOR (UTC)
DTD113ZA3 - NPN Digital Transistors (Cystech Electonics)
DTD114E - NPN DIGITAL TRANSISTOR (UTC)
DTD114EA3 - NPN Digital Transistors (Cystech Electonics)
DTD114EN3 - NPN Digital Transistors (CYStech)
DTD114T - NPN DIGITAL TRANSISTOR NPN DIGITAL TRANSISTOR (UTC)
DTD123Y - Bias Resistor Transistor NPN Silicon (WEITRON)
DTD123Y - NPN DIGITAL TRANSISTOR (UTC)

Other Datasheets by ROHM

DTDG23YP - Digital Transistor
DTDG14 - Digital transistor
DTDG14GP - Digital transistor
DTDG14GPT100 - Digital transistor
DTD113EC - Digital Transistor
DTD113EK - Digital transistors
DTD113ES - Digital transistors
DTD113Z - Digital transistors

Full PDF Text Transcription

Click to expand full text

DTDG23YP FRA 60V/1A Digital Transistor (with built-in resistor and zener diode) Datasheet AEC-Q101 Qualified Parameter VCC IC R1 R2 Value 60±10V 1A 2.2kΩ 10kΩ lFeatures 1)High DC current gain. 　 (Min.300 at Vo/Io=2V/500mA) 2)Low Vo(ON). 　 (Typ.400mV at Io/II=500mA/5mA) 3)Built-in zener diode gives strong protection 　 against reverse surge by L-load. 　 (an inductive load) lOutline SOT-89 SC-62 　　　　　 (MPT3) 　　　　　　　　　　　　　 lInner circuit lApplication INVERTER, INTERFACE, DRIVER lPackaging specifications 　　　　　　　　　　　　　　　　　　　　　　 Part No.

Published: Apr 28, 2020 |