GNP1150TCA-Z
GNP1150TCA-Z is GaN Enhancement Mode Power Transistor manufactured by ROHM.
Ga N Enhancement Mode Power Transistor
VDSS RDS(on) (Typ.)
QG, typ. ID(Tc=25℃)- 1 Qoss @ 400V
Qrr
650V 150mΩ 2.7n C
11A 18.5n C
0n C l Features
- 650V E-mode Ga N FET
- 150mΩ Resistance
- 2.7n C Gate Charge l Application
- High switching frequency converter
- High density converter l Outline
DFN8080AK
(5), (6), (7), (8)
(Top view)
(4), (3), (2), (1) (Bottom view) l Inner circuit
(8), (7), (6), (5)
(1) (2)
(3), (4)
(1) Gate (2) Kelvin Source (3) Source (4) Source (5) Drain (6) Drain (7) Drain (8) Drain l Packaging specifications Packing
Embossed tape
Reel size (mm)
Tape width (mm) Type
Basic ordering unit (pcs)
16 3500
Taping code
E2
Marking
GNP1150TCA l Absolute maximum ratings (Ta = 25°C) Parameter
Continuous Drain current Pulse Drain current Drain
- Source Voltage
Tc = 25°C Tc = 125°C Tc = 25°C Tc = 125°C
Transient Drain
- Source Voltage
Gate
- Source voltage (DC)
Transient Gate
- Source voltage
Power dissipation(Tc=25℃)...
