GNP1150TCA-Z Description
GNP1150TCA-Z GaN Enhancement Mode Power Transistor Datasheet VDSS RDS(on) (Typ.) QG, typ. - 46.5 - °C/W - 2.7 - °C/W - - 260 °C .rohm.
GNP1150TCA-Z Key Features
- 650V E-mode GaN FET -150mΩ Resistance -2.7nC Gate Charge
GNP1150TCA-Z is GaN Enhancement Mode Power Transistor manufactured by ROHM.
| Part Number | Description |
|---|---|
| GNP2025TD-Z | 650V Enhancement mode GaN HEMT |
| GNP2050TD-Z | 650V Enhancement mode GaN HEMT |
| GNP2050TEC-Z | 650V Enhancement mode GaN HEMT |
| GNP2070TD-Z | 650V Enhancement mode GaN HEMT |
| GNP2130TEC-Z | 650V Enhancement mode GaN HEMT |
GNP1150TCA-Z GaN Enhancement Mode Power Transistor Datasheet VDSS RDS(on) (Typ.) QG, typ. - 46.5 - °C/W - 2.7 - °C/W - - 260 °C .rohm.