MG6308WZ Description
MG6308WZ 650V 75A Insulated Gate Bipolar Transistor VCES IC (Nominal) VCE(sat) (Typ.) Max. FULL SQUARE Unit - lElectrical Characteristics (at Tj = 25°C unless otherwise specified, in case of TO-247N package) Parameter Symbol Conditions Values Min. Emitter Bonding Pad Backside.
MG6308WZ Key Features
- Emitter Saturation Voltage