MG7405WZ Description
MG7405WZ 1800V 40A Insulated Gate Bipolar Transistor Datasheet VCES IC (Nominal) VCE(sat) (Typ.) Max. 1/3 2019.08 - Rev.A MG7405WZ Datasheet lElectrical Characteristics (at Tj = 25°C unless otherwise specified, in case of TO-247N package) Parameter Symbol Conditions Values Min. Gate Bonding Pad 0.10±0.03 8.20 Unit：mm 6.00 ②.
MG7405WZ Key Features
- Emitter Saturation Voltage
- Resonance Inverter
- 1 Monolithic Body Diode