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MG7405WZ - Insulated Gate Bipolar Transistor

Key Features

  • 1) Trench Light Punch Through Type 2) Low Collector - Emitter Saturation Voltage 3) High Speed Switching 4) Low Switching Loss & Soft Switching 5) Monolithic Body Diode with Low Forward Voltage l.

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Datasheet Details

Part number MG7405WZ
Manufacturer ROHM
File Size 238.85 KB
Description Insulated Gate Bipolar Transistor
Datasheet download datasheet MG7405WZ Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MG7405WZ 1800V 40A Insulated Gate Bipolar Transistor Datasheet VCES IC (Nominal) VCE(sat) (Typ.) Max. Possible Chips per Wafer 1800V 40A 2.