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MG7902WZ
600V 30A Insulated Gate Bipolar Transistor
VCES IC (Nominal) VCE(sat) (Typ.)
Max. Possible Chips per Wafer
600V 30A 1.4V 1931pcs
lFeatures 1) Trench Light Punch Through Type
2) Low Collector - Emitter Saturation Voltage
3) Soft Switching
lOutline
Wafer
lInner Circuit
(2) (1)
lApplication Partial Switching PFC Discharge Circuit Brake for Inverter
(3)
Datasheet
(1) Gate (2) Collector (3) Emitter
lAbsolute Maximum Ratings Parameter
Collector - Emitter Voltage, Tj = 25°C Gate - Emitter Voltage Collector Current Pulsed Collector Current Operating Junction Temperature *1 Depending on thermal properties of assembly *2 Pulse width limited by Tjmax.
Symbol VCES VGES IC*1 ICP*2 Tj
Value 600 ±30
*1)
120 -40 to +175
Unit V V A A °C
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