QH8JA1
-20V Pch +Pch Middle Power MOSFET
VDSS RDS(on)(Max.)
ID PD
-20V 38mΩ ±5.0A 1.5W l Features
1) Low on
- resistance. 2) Small surface mount package(TSMT8) 3) -1.8V Drive. 4) Pb-free lead plating ; Ro HS pliant l Outline
TSMT8
l Inner circuit
Datasheet
l Application Switching l Packaging specifications
Packing
Reel size (mm) Type Tape width (mm)
Quantity (pcs) Taping code Marking
Embossed Tape 180 8 3000 TCR JA1 l Absolute maximum ratings (Ta = 25°C ,unless otherwise specified) <Tr1 and Tr2>
Parameter
Symbol
Value
Unit
Drain
- Source voltage
VDSS
-20 V
Continuous drain current
ID- 1 ±5.0 A
Pulsed drain current
IDP- 2 ±18 A
Gate
- Source voltage
VGSS
±10 V
Avalanche current, single pulse
IAS- 3 -5.0 A
Avalanche energy, single pulse
EAS- 3
8.9 m J
Power dissipation (total)
PD- 4 1.5 W
PD- 5 1.1
Junction temperature
Tj 150...
