QS8J11 Description
NotNeRewcDoemsimgennsded for QS8J11 -12V Pch +Pch Middle Power MOSFET VDSS RDS(on)(Max.) ID PD -12V 43mΩ ±3.5A 1.5W lFeatures 1) Low on - resistance. 3) Built-in G-S protection diode. 4) Small surface mount package(TSMT8) 5) Pb-free lead plating.
QS8J11 Key Features
- resistance. 2) -1.5V Drive. 3) Built-in G-S protection diode. 4) Small surface mount package(TSMT8) 5) Pb-free lead plat