R6055VNZ4
Nch 600V 59mohm(typ.) Power MOSFET
VDSS(@Tj max.)- 5 RDS(on)(Max.)
IDP- 2 PD
650V 0.071Ω ±165A 543W l Outline
TO-247 l Features
1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; Ro HS pliant 6) Halogen free mold pound l Inner circuit l Application Switching applications
Marking l Absolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Drain
- Source voltage
VDSS
Continuous drain current (Tc = 25°C)
ID- 1
Pulsed drain current
IDP- 2
Gate
- Source voltage Avalanche current, single pulse Avalanche energy, single pulse MOSFET dv/dt
VGSS IAS- 3 EAS- 3 dv/dt- 4
Power dissipation (Tc = 25°C)
Junction temperature
Tj
Operating junction and storage temperature range
Tstg
Value
Unit
±55
±165
±30
233 m J
V/ns
℃
-55 to...
