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R6507ENX
Nch 650V 7A Power MOSFET
Datasheet
VDSS RDS(on)(Max.)
ID PD
650V 0.665Ω
±7A 46W
lFeatures
1) Low on-resistance 2) Fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant
lOutline
TO-220FM
lInner circuit
lApplication Switching
lPackaging specifications
Code
Packing
C7 G
Tube
C7 Tube*
- (Blank)
Bulk*
*Package dimensions are different
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage Continuous drain current Pulsed drain current
VDSS ID*1 IDP*2
650 V ±7 A ±21 A
Gate - Source voltage
static AC(f>1Hz)
VGSS
±20 V ±30 V
Avalanche current, single pulse Avalanche energy, single pulse Power dissipation (Tc = 25°C)
IAS EAS*3 PD
1.