R6507ENX
Nch 650V 7A Power MOSFET
Datasheet
VDSS RDS(on)(Max.)
ID PD
650V 0.665Ω
±7A 46W l Features
1) Low on-resistance 2) Fast switching 3) Parallel use is easy 4) Pb-free plating ; Ro HS pliant l Outline
TO-220FM
l Inner circuit
l Application Switching l Packaging specifications
Code
Packing
C7 G
Tube
C7 Tube-
- (Blank)
Bulk-
- Package dimensions are different l Absolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain
- Source voltage Continuous drain current Pulsed drain current
VDSS ID- 1 IDP- 2
650 V ±7 A ±21 A
Gate
- Source voltage static AC(f＞1Hz)
VGSS
±20 V ±30 V
Avalanche current, single pulse Avalanche energy, single pulse Power dissipation (Tc = 25°C)
IAS EAS- 3 PD
1.3 A 136 m J 46 W
Junction temperature
Tj 150 ℃
Operating junction and storage temperature range
Tstg
-55 to +150
℃
...
