Datasheet4U Logo Datasheet4U.com

R6515KNX - Power MOSFET

Datasheet Summary

Features

  • 1) Low on-resistance 2) Ultra fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lInner circuit l.

📥 Download Datasheet

Datasheet preview – R6515KNX

Datasheet Details

Part number R6515KNX
Manufacturer ROHM
File Size 1.80 MB
Description Power MOSFET
Datasheet download datasheet R6515KNX Datasheet
Additional preview pages of the R6515KNX datasheet.

📁 Similar Datasheet

  • R6515KNX - N-Channel MOSFET (INCHANGE)
  • R6515KNJ - N-Channel MOSFET (INCHANGE)
  • R6515KNZ - N-Channel MOSFET (INCHANGE)
  • R6515 - (R650x / R651x) Microprocessors (Rockwell)
  • R6515ENJ - N-Channel MOSFET (INCHANGE)
  • R6515ENX - N-Channel MOSFET (INCHANGE)
  • R6515ENZ - N-Channel MOSFET (INCHANGE)
  • R6511ENJ - N-Channel MOSFET (INCHANGE)
  • R6511ENX - N-Channel MOSFET (INCHANGE)
  • R6511KNJ - N-Channel MOSFET (INCHANGE)
Other Datasheets by ROHM

Full PDF Text Transcription

Click to expand full text
R6515KNX 　　Nch 650V 15A Power MOSFET 　　 Datasheet lOutline VDSS 650V 　 RDS(on)(Max.) 0.315Ω ID ±15A TO-220FM PD 60W 　 　　　　　　 lFeatures 1) Low on-resistance 2) Ultra fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lInner circuit lApplication Switching lPackaging specifications Code Packing C7 G Tube C7 Tube* - (Blank) Bulk* *Package dimensions are different lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current Pulsed drain current VDSS ID*1 IDP*2 650 V ±15 A ±45 A Gate - Source voltage static AC(f＞1Hz) VGSS ±20 V ±30 V Avalanche current, single pulse Avalanche energy, single pulse Power dissipation (Tc = 25°C) IAS EAS*3 PD 2.
Published: |