R6524KNX3
Nch 650V 24A Power MOSFET
VDSS RDS(on)(Max.)
ID PD
650V 0.185Ω ±24A 253W l Features
1) Low on-resistance 2) Ultra fast switching 3) Parallel use is easy 4) Pb-free plating ; Ro HS pliant l Outline
TO-220AB l Inner circuit
Datasheet l Application Switching l Packaging specifications
Packing
Tube
Packing code
C16
Marking
Quantity (pcs)
1000 l Absolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain
- Source voltage Continuous drain current (Tc = 25°C) Pulsed drain current
VDSS ID- 1 IDP- 2
±24
±72
Gate
- Source voltage static
AC(f＞1Hz)
VGSS
±20
±30
Avalanche current, single pulse Avalanche energy, single pulse Power dissipation (Tc = 25°C) Junction temperature Operating junction and storage temperature range
IAS EAS- 3 PD
Tj Tstg
654 m...
