R6530KNZ4
R6530KNZ4 is Power Transistor manufactured by ROHM.
Nch 650V 30A Power MOSFET
VDSS RDS(on)(Max.)
ID PD
650V 0.140Ω ±30A 305W l Features
1) Low on-resistance 2) Fast switching 3) Parallel use is easy 4) Pb-free plating ; Ro HS pliant l Outline
TO-247G
l Inner circuit
Datasheet
l Application Switching l Packaging specifications Packing
Tube
Packing code
C13
Marking
Quantity (pcs)
600 l Absolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain
- Source voltage Continuous drain current (Tc = 25°C) Pulsed drain current
VDSS ID- 1 IDP- 2
650 V ±30 A ±90 A
Gate
- Source voltage static AC(f＞1Hz)
VGSS
±20 V ±30 V
Avalanche current, single pulse
IAS- 3 5.2 A
Avalanche energy, single pulse
EAS- 3
730 m J
Power dissipation (Tc = 25°C)
PD 305 W
Junction temperature
Tj 150 ℃
Operating junction and storage temperature...
