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R6530KNZ4
Nch 650V 30A Power MOSFET
VDSS RDS(on)(Max.)
ID PD
650V 0.140Ω ±30A 305W
lFeatures
1) Low on-resistance 2) Fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant
lOutline
TO-247G
lInner circuit
Datasheet
lApplication Switching
lPackaging specifications Packing
Tube
Packing code
C13
Marking
R6530KNZ4
Quantity (pcs)
600
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage Continuous drain current (Tc = 25°C) Pulsed drain current
VDSS ID*1 IDP*2
650 V ±30 A ±90 A
Gate - Source voltage
static AC(f>1Hz)
VGSS
±20 V ±30 V
Avalanche current, single pulse
IAS*3 5.