R6547KNZ1
Nch 650V 47A Power MOSFET
Datasheet l Outline
VDSS
650V
TO-247
RDS(on)(Max.) ID PD
0.080Ω ±47A 480W e l Features
1) Low on-resistance t 2) Fast switching speed
3) Parallel use is easy 4) Pb-free plating ; Ro HS pliant l Inner circuit le l Application
Switching l Packaging specifications Packing
Packing code o Marking
Basic ordering unit (pcs) s l Absolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Drain
- Source voltage b Continuous drain current (Tc = 25°C)
Pulsed drain current
VDSS ID- 1 IDP- 2
650 ±47 ±141
OGate
- Source voltage static
±20
AC(f＞1Hz)
VGSS
±30
Tube C9 R6547KNZ1 450
Unit V A A V V
Avalanche current, single pulse
Avalanche energy, single pulse
EAS- 3
1222 m J
Power dissipation (Tc = 25°C) Junction temperature Operating junction and storage temperature range
Tj
℃
Tstg
-55 to...
