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R8003KND3
Nch 800V 3A Power MOSFET
VDSS RDS(on)(Max.)
ID PD
800V 1.8Ω ±3A 48W
lFeatures
1) Low on-resistance 2) Fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant
lPackage
TO-252
lInner circuit
Datasheet
lApplication Switching
lMarking specification Marking
R8003KND3
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage Continuous drain current Pulsed drain current
VDSS ID*1 IDP*2
800 V ±3 A ±9 A
Gate - Source voltage
static AC(f＞1Hz)
VGSS
±20 V ±30 V
Avalanche current, single pulse Avalanche energy, single pulse
IAS EAS*3
0.
R8003KND3 Datasheet
