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RB085T-60NZ - Schottky Barrier Diode

Key Features

  • 1) Cathode common type. (TO-220) 2) Low IR 3) High reliability.
  • Construction Silicon epitaxial planer Data Sheet.
  • Structure (1) (2) (3).
  • Packing Dimensions (Unit : mm) 7 540 34.5.
  • Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (.
  • 1) VRM 60 VR 60 Io 10 Forward current surge peak (60Hz / 1cyc) (.
  • 1) Junction temperature IFSM Tj 100 150 Storage temperature Tstg.

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Datasheet Details

Part number RB085T-60NZ
Manufacturer ROHM
File Size 445.12 KB
Description Schottky Barrier Diode
Datasheet download datasheet RB085T-60NZ Datasheet

Full PDF Text Transcription for RB085T-60NZ (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for RB085T-60NZ. For precise diagrams, and layout, please refer to the original PDF.

Schottky barrier diode RB085T-60NZ Applications Switching power supply Dimensions (Unit : mm) Features 1) Cathode common type. (TO-220) 2) Low IR 3) High reliability ...

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tures 1) Cathode common type. (TO-220) 2) Low IR 3) High reliability Construction Silicon epitaxial planer Data Sheet Structure (1) (2) (3) ●Packing Dimensions (Unit : mm) 7 540 34.5 Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) VRM 60 VR 60 Io 10 Forward current surge peak (60Hz / 1cyc) (*1) Junction temperature IFSM Tj 100 150 Storage temperature Tstg 40 to 150 (*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=130C Electrical characteristic (Ta=25C) Parameter Forward voltage Reverse current Th