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RB088T100FH - Schottky Barrier Diode

Features

  • Cathode common type 2) High reliability 3) Super low IR 10.0± 0.3 0.1 3.2±0.2 12.0±0.2 1 1.2 15.0± 0.4 0.2 2.8±00..21 (1) (2) (3) Anode Cathode Anode 14.0±0.5.
  • Construction Silicon epitaxial planar type 1.3 0.8 2.45±0.5 2.45±0.5 (1) (2) (3) 2.6±0.5 0.75±00..015 ROHM : TO220FN 1 : Manufacture Date.
  • Absolute Maximum Ratings (Tc= 25°C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Duty≦0.5 110 V Reverse voltage VR Direct reverse voltage.

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Datasheet Details

Part number RB088T100FH
Manufacturer ROHM
File Size 808.64 KB
Description Schottky Barrier Diode
Datasheet download datasheet RB088T100FH Datasheet
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Full PDF Text Transcription

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5.0±0.2NotNeRewcDoemsimgennsded for 8.0±0.2 Schottky Barrier Diode RB088T100FH Application Switching power supply Dimensions (Unit : mm) 4.5±00..31 Datasheet AEC-Q101 Qualified Structure Features 1) Cathode common type 2) High reliability 3) Super low IR 10.0± 0.3 0.1 3.2±0.2 12.0±0.2 1 1.2 15.0± 0.4 0.2 2.8±00..21 (1) (2) (3) Anode Cathode Anode 14.0±0.5 Construction Silicon epitaxial planar type 1.3 0.8 2.45±0.5 2.45±0.5 (1) (2) (3) 2.6±0.5 0.75±00..015 ROHM : TO220FN 1 : Manufacture Date Absolute Maximum Ratings (Tc= 25°C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Duty≦0.
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