Construction Silicon epitaxial planar
RB215
①
T-90
1.2
1.3
0.8 (1) (2) (3)
5.0±0.2 8.0±0.2 12.0±0.2
13.5MIN 15.0±0.4 0.2
8.0
0.7±0.1 0.05
2.6±0.5
ROHM : ＴO220FN ① Manufacture Date
Data Sheet.
Structure
(1) (2) (3).
Packing Dimensions (Unit : mm) 7
540
34.5.
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Reverse voltage (repetitive)
VRM 90
Reverse voltage (DC)
VR 90
Average rectified forward current(.
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Schottky barrier diode
RB215T-90NZ
Applications General rectification (Common cathode dual chip)
Dimensions (Unit : mm)
10.0±0.3 0.1
4.5±0.3 0.1
2.8±0.2 0.1
Features 1) Small power mold type.(TO-220) 2) Low IR 3) High reliability
Construction Silicon epitaxial planar
RB215
①
T-90
1.2
1.3
0.8 (1) (2) (3)
5.0±0.2 8.0±0.2 12.0±0.2
13.5MIN 15.0±0.4 0.2
8.0
0.7±0.1 0.05
2.6±0.5
ROHM : ＴO220FN ① Manufacture Date
Data Sheet
Structure
(1) (2) (3)
●Packing Dimensions (Unit : mm) 7
540
34.
RB215T-90NZ Datasheet
