RB298NS100
Overview
- 5 2.5 8.5 16 lLand size figure (Unit : mm) 11
- 9 2.5
- 54 TO-263S
- 54 lStructure (2) Cathode lConstruction Silicon epitaxial planar type ROHM : TO-263S JEITA : SC-83 ①1 : Manufacture date lTaping specifications (Unit : mm) (1) Anode (3) Anode lAbsolute Maximum Ratings (Tc= 25°C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Duty≦0.5 110 V Reverse voltage Average forward rectified current Non-repetitive forward current surge peak Operating junction temperature VR Io IFSM Tj Direct reverse voltage 60Hz half sin wave, resistive load, IO/2 per diode, Tc=100ºC Max. 60Hz half sin wave, Non-repetitive at Ta=25ºC , 1cycle, per diode -
