RB522ES-30 Datasheet | ROHM

Schottky Barrier Diode RB522ES-30 l Application General rectification l Dimensions (Unit : mm) Data Sheet l Land Size Figure (Unit : mm) 0.380±0.010 0.180±0.010 0.600±0.010 0.23 0.38 l Features 1) Small silicon package (SMD0603) 2) High Accuracy Manufacturing Dimension tolerance10mm 3) Low VF l Construction Silicon epitaxial planar type 0～0.030 0.280±0.010 0.260±0.010 0.300±0.010 ROHM: SMD0603 l Taping Dimensions (Unit : mm) SMD0603 l Structure Cathode Anode - Absolure Maximum Ratings (Ta=25o C) Parameter Symbol Conditions Repetitive Peak Reverse Voltage VRM Duty≦0.5 Reverse Voltage Average forward rectified current Non-repetitive Forward Current Surge Peak Operating Junction Temperature VR IO IFSM Tj Direct Reverse Voltage Glass epoxy board mounted, 60Hz half sin wave, resistive load, 60Hz half sin wave, one cycle, non-repetitive at Ta=25ºC - Storage Temperature Tstg - - Electrical Characteristics (Tj=25℃) Parameter Symbol Forward...