RB522ES-30 - Schottky Barrier Diode

ROHM

Key Features

1) Small silicon package (SMD0603) 2) High Accuracy Manufacturing Dimension tolerance10mm 3) Low VF lConstruction Silicon epitaxial planar type F 0～0.030 0.280±0.010 0.260±0.010 0.300±0.010 ROHM: SMD0603 lTaping Dimensions (Unit : mm) SMD0603 lStructure Cathode Anode.
Absolure Maximum Ratings (Ta=25oC) Parameter Symbol Conditions Repetitive Peak Reverse Voltage VRM Duty≦0.5 Reverse Voltage Average forward rectified current Non-repetitive Forward Current Surge Peak Operating.

RB522ES-30 schottky barrier diode by ROHM - Datasheet Preview

Datasheet Details

Part number	RB522ES-30
Manufacturer	ROHM
File Size	1.56 MB
Description	Schottky Barrier Diode
Datasheet	RB522ES-30 Datasheet

Full PDF Text Transcription for RB522ES-30 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for RB522ES-30. For precise diagrams, and layout, please refer to the original PDF.

Schottky Barrier Diode RB522ES-30 lApplication General rectification lDimensions (Unit : mm) Data Sheet lLand Size Figure (Unit : mm) 0.31 0.380±0.010 0.180±0.010 0.600±0...

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eet lLand Size Figure (Unit : mm) 0.31 0.380±0.010 0.180±0.010 0.600±0.010 0.23 0.38 lFeatures 1) Small silicon package (SMD0603) 2) High Accuracy Manufacturing Dimension tolerance10mm 3) Low VF lConstruction Silicon epitaxial planar type F 0～0.030 0.280±0.010 0.260±0.010 0.300±0.010 ROHM: SMD0603 lTaping Dimensions (Unit : mm) SMD0603 lStructure Cathode Anode ●Absolure Maximum Ratings (Ta=25oC) Parameter Symbol Conditions Repetitive Peak Reverse Voltage VRM Duty≦0.

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