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RBR20T60ANZ - Schottky Barrier Diode

Features

  • 1) Cathode common dual type 2) High reliability 3) Low VF lConstruction Silicon epitaxial planar type ① 1.2 1.3 0.8 (1) (2) (3) 2.45±0.5 2.45±0.5 ROHM : TO-220FN 5.0±0.2 8.0±0.2 14.0±0.5 12.0±0.2 15.0± 0.4 0.2 2.6±0.5 0.75±00..015 1 Manufacture date Data Sheet lStructure (1) (2) (3) Anode Cathode Anode lPackage Dimensions (Unit : mm) 7 540 34.5 lAbsolute Maximum Ratings (Tc= 25°C) Parameter Symbol Repetitive Peak Reverse Voltage Reverse Voltage Average Forward Rectified Current No.

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Datasheet Details

Part number RBR20T60ANZ
Manufacturer ROHM
File Size 514.69 KB
Description Schottky Barrier Diode
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Full PDF Text Transcription

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Schottky Barrier Diode RBR20T60ANZ lApplication Switching power supply lDimensions (Unit : mm) 10.0±00..31 φ3.2±0.2 4.5±00..31 2.8±00..21 lFeatures 1) Cathode common dual type 2) High reliability 3) Low VF lConstruction Silicon epitaxial planar type ① 1.2 1.3 0.8 (1) (2) (3) 2.45±0.5 2.45±0.5 ROHM : TO-220FN 5.0±0.2 8.0±0.2 14.0±0.5 12.0±0.2 15.0± 0.4 0.2 2.6±0.5 0.75±00..015 1 Manufacture date Data Sheet lStructure (1) (2) (3) Anode Cathode Anode lPackage Dimensions (Unit : mm) 7 540 34.5 lAbsolute Maximum Ratings (Tc= 25°C) Parameter Symbol Repetitive Peak Reverse Voltage Reverse Voltage Average Forward Rectified Current Non-repetitive Forward Current Surge Peak Operating Junction Temperature Storage Temperature VRM VR Io IFSM Tj Tstg Conditions Duty≦0.
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