RD3T075CN
Nch 200V 7.5A Power MOSFET
VDSS RDS(on)(Max.)
ID PD
200V 325mΩ ±7.5A
52W l Features 1) Low on-resistance 2) Fast switching speed 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb-free plating ; Ro HS pliant l Outline
DPAK TO-252 l Inner circuit l Packaging specifications Packing
Reel size (mm) l Application Switching Power Supply
Type Tape width (mm) Quantity (pcs)
Taping code
Marking l Absolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Drain
- Source voltage
Continuous drain current
Tc = 25°C Tc = 100°C
Pulsed drain current
Gate
- Source voltage
Avalanche energy, single pulse
Avalanche current, single pulse
Power dissipation (Tc = 25°C)
Junction temperature
Operating junction and storage temperature range
VDSS ID- 1 ID- 1 IDP- 2 VGSS EAS- 3 IAS- 3 PD Tj Tstg
200 ±7.5 ±4.1 ±30 ±30 4.13 3.75 52 150 -55 to +150
Embossed Tape 330 16 2500 TL1
Unit V A A A V m J A W
℃ ℃
.rohm.
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