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RFN5BGE3S - Super Fast Recovery Diode

Datasheet Summary

Features

  • 1) Low switching loss 2) High current overload capacity ROHM : TO-252GE JEITA : -.
  • Construction Silicon epitaxial planar type.
  • Taping specifications (Unit : mm) TO-252 2.3 2.3.
  • Structure Cathode Open Anode.
  • Absolute maximum ratings (at Tc= 25°C unless otherwise specified) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Duty≦0.5 350 V Reverse voltage VR Average rectified foward current Io Peak forward surge current IFSM Junctio.

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Datasheet preview – RFN5BGE3S

Datasheet Details

Part number RFN5BGE3S
Manufacturer ROHM
File Size 1.30 MB
Description Super Fast Recovery Diode
Datasheet download datasheet RFN5BGE3S Datasheet
Additional preview pages of the RFN5BGE3S datasheet.

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Full PDF Text Transcription

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Super Fast Recovery Diode RFN5BGE3S Datasheet Series Standard Fast Recovery Dimensions (Unit : mm) Land size figure (Unit : mm) 6.0 3.0 2.0 6.0 Application General rectification 1.6 1.6 Features 1) Low switching loss 2) High current overload capacity ROHM : TO-252GE JEITA : - Construction Silicon epitaxial planar type Taping specifications (Unit : mm) TO-252 2.3 2.3 Structure Cathode Open Anode Absolute maximum ratings (at Tc= 25°C unless otherwise specified) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Duty≦0.
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